چكيده به لاتين
In this thesis, a single photon avalanche diode (SPAD) was first designed and simulated in 90 nm CMOS technology, and some specifications of this diode, including the voltage-current characteristic, fill factor (FF), photon detection probability (PDP), and the dark counting rate (DCR) are simulated. Finally, the simulation results have been reported. To calculate these values, it is necessary to calculate the probability of a breakdown event in the discharge zone of the diode, which in this thesis because of using the 90 nm CMOS technology, the discharge area is very small, and the local field model cannot be used to calculate the probability of an avalanche breakdown. Therefore, a non-local model has been used to predict the breakdown.
The DCR in SPADs is a random variable and it has a Poisson distribution. The average DCR of a SPADs designed in this dissertation is 600 events per second. Given that the average DCR of this diode is high, it can be sampled from its output without shining the light to the mentioned diode, and translate the pulses of dark noise into random bits.
In the other random number generator, which is designed in this thesis, the random property of the number of photons detected at a given time interval is revealed by a SPAD. In this system, for the detection of a photon, three SPADs within 180 nm technology are used simultaneously in one pixel. The bit rate of the system is 80 megabits per seconds (Mbps) and the power consumption per 16 Pico joule per bit. To ensure randomness of the resulting numbers, a set of tests designed by the National Institute of Technology and the US standards has been applied to a gigabytes of simulation data and the test results have been reported.
