چكيده به لاتين
The Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) scaling leads to higher subthreshold swing and therefore, higher amount of power consumption. Also, demanding for fast switching devices are growing in order to have an ideal switch in logic circuits. Hence, there is a tendency toward decreasing the subthreshold swing value in order to reduce the supply voltage as well as gate threshold voltage and increase the ON/OFF rate. New transistors such as IMOS transistors which possess subthreshold swing value of less than 60mV/dec and work based on avalanche breakdown mechanism, are potential candidates for steeper subthreshold slope transistors.
In this work, a schottky barrier double gate impact ionization metal oxide semiconductor (SBDG-IMOS) transistor with reduced subthreshold swing (SS), gate threshold voltage (VGT), and operational voltage (VOp) is proposed. The proposed transistor benefits from approximately one order of magnitude ON current enhancement with ON/OFF current ratio of 1.37×107 which is investigated by device simulations. Using double gate structures and silicide type source, results in higher electric field inside channel and intrinsic region which enhances the impact ionization rate in the intrinsic region. Hence, a gate threshold voltage of 1.27V and steep current-voltage characteristics with SS of 1.9mV/dec is achieved. According to parasitic resistance reduction in the source region due to the silicide usage in source, the higher voltage difference between source and drain appears across the intrinsic region enhancing the electric field in intrinsic area so that the source-drain voltage which initiates the avalanche breakdown is reduced to 7.7V.
Keywords: impact-ionization metal oxide semiconductor (IMOS), schottky barrier, double gate, subthreshold swing, Analytical modeling
