چكيده به لاتين
A new structure of kesterite thin-film solar cells was simulated by means of SCAPS. In addition to optimizing CZTS/CdS structure, the structure of CZTS/ZnMgO, as well as the structures based on dual-layer absorbers CZTSSe/CZTS/CdS and CZTSSe/CZTS/ZnMgO were suggested and analyzed. Increasing the absorber layer thickness by 3 μm would cause an improvement of about 35%, 15% and 15% in efficiency, open circuit voltage, and short circuit current respectively. Adding CZTSSe absorber layer beneath CZTS absorber layer would cause an improvement of about 60%, 30% and 45% in efficiency, open circuit voltage, and short circuit current respectively. Optimum buffer layer thickness in the structures of CZTSSe/CZTS/CdS and CZTSSe/CZTS/ZnMgO were respectively 150 nm and 125 nm. With an increase of temperature from 300 K to 400 K, photovoltaic parameters, VOC, JSC, FF, and η have a decreasing trend. The most optimal proposed structure for CZTSSe/CZTS/ZnMgO occurs when buffer layer has a thickness of 50 nm. This structure is achieved when the band gap of absorber layers CZTSSe and CZTS and buffer layer ZnMgO would be respectively 0.9 eV, 1.5 eV, and 3.48 eV. The present study achieved a high efficiency for CZTSSe-based thin-film solar cells. This efficiency for the solar cell with CdS buffer layer was η=15.94% and it was η=15.77% for the solar cell with 〖Zn〗_0.8125 〖Mg〗_0.1875 O buffer layer.
