چكيده به لاتين
In this research, we investigated and studied and designed a wide band low noise amplifier. We made the design with 180 nm CMOS technology and ADS software. At first, we designed and simulated simple low-noise amplifier circuits, and then we designed advanced amplifier circuits and proposed and presented techniques and methods to improve its performance. First, we designed the structure of the low noise amplifier in the 800 MHz band, where initially the cells only included common source low noise amplifiers. We saw that the noise figure of this amplifier was small and equal to 1.1 dB. Finally, we designed a low-noise low-power amplifier using a feedback amplifier with a resistive inverter structure to achieve the goal of wide-band input matching. We also used the noise elimination circuit in this project and designed it. I saw that our minimum noise figure is equal to 0.8 dB. In addition, the gain reached 20 dB, which is a significant improvement. The power consumption of this circuit is also very low and equal to 3 mW. Therefore, in this research, using the idea of using a noise elimination circuit, using a feedback amplifier with a resistive inverter structure, and using an inductor in the matching transistor block, we designed a low-noise amplifier, which compared to the previous designs, has a number Lower noise, higher gain, higher frequency range and lower power consumption. In the next step, using the bat algorithm, the characteristics of the amplifier were optimized.
