چكيده به لاتين
Total ionizing radiation may affect the electrical response of electronic systems, causing variation in their electrical characteristics and reducing performance. It is necessary to study the effects of radiation in microelectronic devices in space, air, and every day’s applications that are affected by artificial or natural radiation environments. This thesis investigates the mechanisms of total ionizing dose (TID) degradation in several modern nanometer-scale technologies. Several transistors, such as MOSFET, FinFET, GAA, and TFET structures, have been simulated under ionizing radiation at several temperatures, bias voltages, and different dimensions and gate lengths of transistors. Simulations are used to identify the location, density, and energy levels of defects caused by radiation. The simulated devices were subjected to heavy ion irradiation from 10 kRad to 100 MRad, Gamma rays are in this range. TID mechanisms have been studied following technological evolution in several devices:
nMOSFET 200 and 800 nm, pMOSFET 200 and 800 nm, n FinFET 15 nm, p FinFET 15 nm, n GAA 10 nm, p GAA 10 nm, DG-TFET 50 nm, n+ pocket DG-TFET 50 nm, and an inverter. The DG-TFET transistor has been made 20% more radiation resistant by adding an n+ pocket.
All results confirm the high TID tolerance in thin gate oxide in nanoscale technologies due to reduced charge trapping in the gate dielectric.
A new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure consists of high-k and SiO2 dielectrics. The high-k dielectric provides strong electric field at the source/channel junction. This increased electric field results in more band bending and narrow tunneling barrier width. Hence, high ON-current and steep subthreshold swing are resulted for proposed device in comparison with LTFET.
