چكيده به لاتين
Avalanche Photodiodes (ADPs) are widely used in long-distance and high-bit-rate optical communication systems due to their high performance and response to the optical fiber wavelength spectrum. Quantum communication and information technology and precision measurement science are among the cutting-edge technologies that are becoming more and more important every day. Avalanche Photodiodes have long been a vital component in long-distance signal transmission. Over the past few decades, compared with other semiconductor-based optical detectors with large internal gain, avalanche detectors usually offer shorter internal response time, wider optical-to-electrical bandwidth, lower equivalent power-to-noise ratio performance, and higher sensitivity. On the other hand, avalanche detectors with high unity gain have lower output saturation current density and smaller output. Recently, there has been a great demand for optical receivers with larger dynamic range for use in coherent systems. Therefore, it has become important to produce avalanche photodiode devices that can maintain high response and high-speed performance under high saturation output current. In an avalanche photodiode, the material properties, device structure, geometry, and materials used affect the main characteristics including photon detection efficiency, dark count rate, past-pulse, and timming time. In this work, the effect of the thickness of the multiplication layer and the absorption layer on the performance of the avalanche photodiode is studied and investigated. Silvaco simulation software is used as a simulation tool to simulate an accurate model of InGaAs/InP APD and analyze its performance under illumination conditions, and the findings indicate that there is a high correlation between the device characteristics and the thickness of the multiplication layer and the absorption layer
