Simulation an‎d Optimization of a Quantum-Structure-Based Light Emitting Diode (LED) With Nitride Materials

1/1/1900 12:00:00 AM

In this thesis, the structure of Light Emitting Diode (LED) with a quantum well configuration based on nitride materials an‎d compound 𝐼𝑛𝑥𝐺𝑎1−𝑥𝑁 was optimized using Silvaco TCAD simulation software. Parameters such as indium composition, thickness of the quantum well layers all of wich effect device performance an‎d output characteristics were thoroughly investigated. Initially, a single quantum well structure was studied to eva‎luate the influence of indium composition an‎d the active layer thickness of 𝐼𝑛𝑥𝐺𝑎1−𝑥𝑁. The results showed that the active layer thickness primiarily effect quantim confinement, an‎d its variation leads to changes in both intestity an‎d spectral width of emmited light. However, the effect of this parameter on currently density wa significantly less than that of the indium composition. Subsequently, the impact crystal plane polarization in the wurtzite structure was analyzed under three orientation; polat,semi-polar an‎d non-polar. The results indicated the structure grown along polar planes exhibited a more substantial influence on the device’s performance parameters. In the next phase, multi-layer quantum well structures were examined. Increasing the number of layer led to enhanced emission, intensity an‎d spectral broadening, while having a minimal effect on LED’s current density. Finally, a single-layer quantum well structures were compared. The findings demonstrated that increasing the number of quantum well layers in higher light emission intensity.

ديود نور گسيل , ساختار كوانتومي , شبيه سازي , نرمافزار سيلواكو

Light Emitting Diode , Quantum Structure , Simulation , Silvaco TCAD Software

Reza Mehraby Dehlaghi

Dr. Shahab Norouzian Alam, Dr. Bijan Ghafary Ghomi