چكيده به لاتين
In this study, molybdenum- and copper-doped zinc oxide layers prepared by co-sputtering method on quartz substrate. The x-ray diffraction pattern (XRD) indicated the hexagonal zinc oxide lattice and the crystalline orientation in the (002) direction, as well as the X-ray energy spectroscopy (EDS), confirmed the presence of Mo and Cu as a doping material in host lattice. Then the layers annealed in 90 min at 100, 200, 400 and 800 ° C. Effect of annealing temperature on surface morphology, electrical and optical properties of the layers was investigated respectively. The measurement results of electrical resistance using a four-point probe technique indicated that after annealing, the samples electrical resistivity increased. The surface morphologies and thickness of the layers was investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Using AFM analysis data, the correlation length and effective height of the surface roughness were calculated and the results show that annealing increased the effective height of surface roughness. Transmission and absorption spectra were measured with using of UV-VIS spectroscopy analysis. The optical direct band gap of ZnO thin films was calculated to be about 3.10-3.24 eV.
Keywords: zinc oxide, co-sputtering, doped, anneal.
