چكيده به لاتين
In recent years, MEMS switches are becoming more popular in various fields ranging from telecommunication devices, military appliances, biomedical instruments, and many other micro structures .Gradually, it has been replacing its traditional counterparts such as PIN diode, FETswitches, and other mechanical switches owing to its advantages of low power consumption, high reliability, and less manufacturing costs.But the highest concern in RF MEMS Switches is its high actuation voltage. The best way to reduce the actuation voltage is the spring constant reduction. However, the overextended reduction disables the switch. In this reaserch, first, a new analytical method to obtain the minimum spring constant is introduced then a new RF MEMS Switch structure has been proposed. Simulation results show high Reliability and lower actuation voltage for the proposed structure in comparison with the conventional structure. The results of this simulation show the actuation voltage of 1.8 volts, the switching time of 25.6 microseconds, the 4.5 MPa Von Mises stress, the natural frequency of 3118.6 Hz, its mass of 0.206 ng and finally the spring constant of 0.079 N/m. The beam is made of gold and Si3N4 is used as a dielectric. Finally, the high frequency performance of the switch is designed using simulated HFSS software. The simulation shows a 25 dB isolation, a 0.7 dB insertion loss, and a 16 dB return loss at 10 GHz.
Keywords: RF MEMS switch, Low actuation voltage, Spring Constant, Switching Time, Energy Method
