چكيده به لاتين
In today's technological landscape, the demand for software capable of operating at high frequencies or achieving high switching speeds, while maintaining reliable performance under elevated temperatures, has become increasingly pronounced. Gallium Nitride (GaN) material stands out as a viable candidate for producing devices with enhanced speed and power characteristics, owing to its unique properties such as a large energy band gap, high critical electric field, and high electron saturation speed. Moreover, given the burgeoning advancements in space exploration and the deployment of sophisticated equipment in space communication, alongside the imperative for resilience against various radiation sources, GaN-based devices have found utility in such applications, owing to their inherent resistance and capacity to function at elevated frequencies.
This thesis endeavors to augment the output current of transistors while concurrently enhancing performance in the domains of high power and high frequency. To this end, a novel design and schematic of GaN High Electron Mobility Transistor (HEMT) transistors are presented herein. This schematic, constituting a multi-channel GaN HEMT transistor, elevates the transistor's current capability to 5A. Additionally, in pursuit of bolstering the reliability of these transistors, the breakdown voltage of a single GaN Field Plate (GFP) transistor has been heightened to 541V, and when employing multiple Field Plates (FPs), up to 650V has been attained.
Subsequently, leveraging UTMOST and ATLAS software, the ASM-HEMT model for GaN transistors was implemented, and its parameters were extracted. Utilizing these extracted parameters, a high-frequency amplifier circuit was fabricated. Notably, the design improvements are elucidated through the description of the F^(-1)(14 GHz) design, with a comparative analysis against a reference paper from 2021. Both simulations conducted at a frequency of 14 GHz manifest significant enhancements, with an output voltage of 11.42 V, a gain of 14.22 dB, Power Added Efficiency (PAE) of 47.20%, and an output power (P_out) of 33.23 dBm, showcasing remarkable improvements over the referenced work.
